EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE AND ZNSE/ZNS SUPERLATTICES FOR OPTICAL-PROCESSING

被引：3
|
作者：
PONG, CD [1 ]
FEIGELSON, RS [1 ]
DEMATTEI, RC [1 ]
机构：
[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期
关键词：
D O I：
10.1016/S0022-0248(07)80017-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of processing conditions, such as reagent flow ratio (f(VI)/f(II)) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed which effectively reduced the interface roughness of ZnSe/ZnS superlattices, and hence the photoluminescence (PL) linewidth of the superlattice structures.
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页码：650 / 654
页数：5
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