EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE AND ZNSE/ZNS SUPERLATTICES FOR OPTICAL-PROCESSING

被引：3

作者：

PONG, CD ^{[1
]}

FEIGELSON, RS ^{[1
]}

DEMATTEI, RC ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(07)80017-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of processing conditions, such as reagent flow ratio (f(VI)/f(II)) and substrate temperature, on the film stoichiometry, surface morphology, and crystalline quality of MOCVD grown ZnSe films and ZnSe/ZnS superlattices (SLs) has been studied. A growth interruption procedure was developed which effectively reduced the interface roughness of ZnSe/ZnS superlattices, and hence the photoluminescence (PL) linewidth of the superlattice structures.

引用

页码：650 / 654

页数：5

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