CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP

被引：40
|
作者：
TSANG, WT
DAYEM, AH
CHIU, TH
CUNNINGHAM, JE
SCHUBERT, EF
DITZENBERGER, JA
SHAH, J
ZYSKIND, JL
TABATABAIE, N
机构：
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
[2] BELL COMMUN RES,HOLMDEL,NJ 07733
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 03期
关键词：
D O I：
10.1063/1.97214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：170 / 172
页数：3
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