Modeling thermal effects in submicron semiconductor devices

被引：2

作者：

Di Stefano, Vincenza ^{[1
]}

机构：

[1] Univ Catania, Fac Sci MM FF NN, Dipartimento Matemat & Informat, Catania, Italy

来源：

COMMUNICATIONS IN APPLIED AND INDUSTRIAL MATHEMATICS | 2010年 / 1卷 / 01期

关键词：

Semiconductor devices; hydrodynamic models; maximum entropy principle; self-heating;

D O I：

10.1685/2010CAIM482

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

In this paper an Extended Hydrodynamic Model for the coupled system formed by electrons and phonons has been formulated, in which the problem of the closure for the high-order moments is solved by means of the Maximum Entropy Principle of extended thermodynamics. Simulation results for a 1D n(+) - n - n(+) silicon diode are presented.

引用

页码：110 / 127

页数：18

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