Transport phenomena in submicron semiconductor devices

被引：0
|
作者：
Marciak-Kozlowska, Janina [1 ]
机构：
[1] Inst of Electron Technology, Poland
来源：
Electron Technology (Warsaw) | 1989年 / 20卷 / 3-4期
关键词：
Integrated Circuits; VLSI;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The paper surveys an actual state of art of transport phenomena in submicron semiconductor devices research. Basing on Boltzmann equation for carriers distribution function, some new conservation equations for carrier momentum and energy were found. They are a part of a basic equation system for transport phenomena in submicron semiconductor devices complementing the continuity and Poisson equations.
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页码：77 / 100
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