Modeling thermal effects in submicron semiconductor devices

被引：2
|
作者：
Di Stefano, Vincenza [1 ]
机构：
[1] Univ Catania, Fac Sci MM FF NN, Dipartimento Matemat & Informat, Catania, Italy
来源：
COMMUNICATIONS IN APPLIED AND INDUSTRIAL MATHEMATICS | 2010年 / 1卷 / 01期
关键词：
Semiconductor devices; hydrodynamic models; maximum entropy principle; self-heating;
D O I：
10.1685/2010CAIM482
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
In this paper an Extended Hydrodynamic Model for the coupled system formed by electrons and phonons has been formulated, in which the problem of the closure for the high-order moments is solved by means of the Maximum Entropy Principle of extended thermodynamics. Simulation results for a 1D n(+) - n - n(+) silicon diode are presented.
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页码：110 / 127
页数：18
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