LOW-RESISTIVITY N-TYPE LAYERS IN INASXP1-X BY ION-IMPLANTATION

被引：5
|
作者：
DAVIES, DE [1 ]
KENNEDY, JK [1 ]
LOWE, LF [1 ]
机构：
[1] USAF,SYST COMMAND,CAMBRIDGE RES LABS,BEDFORD,MA 01731
来源：
ELECTRONICS LETTERS | 1975年 / 11卷 / 19期
关键词：
D O I：
10.1049/el:19750355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：462 / 463
页数：2
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