PRESSURE-DEPENDENCE OF THE GROWTH OF POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

被引：20
|
作者：
MEAKIN, D [1 ]
PAPADOPOULOU, K [1 ]
FRILIGKOS, S [1 ]
STOEMENOS, J [1 ]
MIGLIORATO, P [1 ]
ECONOMOU, NA [1 ]
机构：
[1] ARISTOTLE UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期
关键词：
D O I：
10.1116/1.583671
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1547 / 1550
页数：4
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