A MODEL FOR FLOW IN A LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION REACTOR

被引：0
|
作者：
ANSART, F
BERNARD, J
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1992年 / 48卷 / 261期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A major aim within the CVD (Chemical Vapor Deposition) field is to obtain homogeneous depositions which necessitates a good gaseous flow inside the reactor. However, design of industrial reactors was empirical for a long time and the quality of the flow was not optimized. For these reasons, the current trend is to develop models to describe flow in experiments ([1] to [5]). In this paper, a visualisation of flow concerning deposition of aluminium nitride in a LPCVD reactor is presented. We have adapted a program code to our experimental apparatus.
引用
下载
收藏
页码：113 / 120
页数：8
相关论文
共 50 条
  • [1] PRESSURE-DEPENDENCE OF THE GROWTH OF POLYCRYSTALLINE SILICON BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION
    MEAKIN, D
    PAPADOPOULOU, K
    FRILIGKOS, S
    STOEMENOS, J
    MIGLIORATO, P
    ECONOMOU, NA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1547 - 1550
  • [2] TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN
    HEGDE, RI
    FIORDALICE, RW
    TOBIN, PJ
    APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2326 - 2328
  • [3] Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane
    Manfredotti, C
    Fizzotti, F
    Amato, G
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1996, 18 (10): : 1159 - 1165
  • [4] Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
    Shan, W
    Schmidt, T
    Yang, XH
    Song, JJ
    Goldenberg, B
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3691 - 3696
  • [5] Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane
    Manfredotti, C.
    Fizzotti, F.
    Amato, G.
    Nuovo Cimento Della Societa Italiana Di Fisica. D, Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, 18 (10):
  • [6] Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
    Oklahoma State Univ, Stillwater, United States
    J Appl Phys, 7 (3691-3696):
  • [7] A MODEL FOR LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION IN A HOT-WALL TUBULAR REACTOR
    HOUF, WG
    GRCAR, JF
    BREILAND, WG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 163 - 171
  • [8] Predictive model extraction for polysilicon low-pressure chemical vapor deposition in a commercial scale reactor
    Shimizu, Ryosuke
    Ogino, Masaaki
    Sugiyama, Masakazu
    Shimogaki, Yukihiro
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (06) : D328 - D333
  • [9] FABRICATION AND PHOTOLUMINESCENCE PROPERTIES OF ZNTE AND CDZNTE FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION
    EKAWA, M
    KAWAKAMI, Y
    TAGUCHI, T
    HIRAKI, A
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 667 - 672
  • [10] INVESTIGATION OF ZINC INCORPORATION IN GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION
    CHANG, CY
    CHEN, LP
    WU, CH
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1860 - 1863
12345