A MODEL FOR FLOW IN A LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION REACTOR

被引:0
|
作者
ANSART, F
BERNARD, J
机构
来源
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1992年 / 48卷 / 261期
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A major aim within the CVD (Chemical Vapor Deposition) field is to obtain homogeneous depositions which necessitates a good gaseous flow inside the reactor. However, design of industrial reactors was empirical for a long time and the quality of the flow was not optimized. For these reasons, the current trend is to develop models to describe flow in experiments ([1] to [5]). In this paper, a visualisation of flow concerning deposition of aluminium nitride in a LPCVD reactor is presented. We have adapted a program code to our experimental apparatus.
引用
收藏
页码:113 / 120
页数:8
相关论文
共 50 条