SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN

被引：240

作者：

BROADBENT, EK ^{[1
]}

RAMILLER, CL ^{[1
]}

机构：

[1] APPL MAT INC,SANTA CLARA,CA 95051

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 06期

关键词：

D O I：

10.1149/1.2115864

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1427 / 1433

页数：7

共 50 条

[1] LOW-PRESSURE SELECTIVE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C313 - C313
[2] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C101 - C101
[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN - DEPOSITION KINETICS, SELECTIVITY AND FILM PROPERTIES
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[J]. THIN SOLID FILMS, 1989, 175 : 55 - 60
[4] FORMATION OF ULTRATHIN TUNGSTEN FILAMENTS VIA SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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