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- [1] GROWTH OF POLYCRYSTALLINE CdS FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION.Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (07): : 1002 - 1007Yamaga, ShigekiYoshikawa, AkihikoKasai, Haruo
- [2] GROWTH OF HIGH-QUALITY ZNSE FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L424 - L426YOSHIKAWA, ATANAKA, KYAMAGA, SKASAI, H
- [3] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3209 - 3211LEE, MKWUU, DSTUNG, HH
- [4] THE GROWTH OF POLYCRYSTALLINE SILICON FILMS BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT RELATIVELY LOW-TEMPERATURESTHIN SOLID FILMS, 1988, 163 : 249 - 254MEAKIN, DMIGLIORATO, PSTOEMENOS, JECONOMOU, NA
- [5] LOW-TEMPERATURE, LOW-PRESSURE CDZNS FILMS PRODUCED BY METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 897 - 902SMITH, PB
- [6] HETEROEPITAXIAL GROWTH OF ZNSE ON SI(111) BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4241 - 4243LEE, MKCHANG, JHYEH, MYLIN, YF
- [7] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1987, 50 (24) : 1725 - 1726LEE, MKWUU, DSTUNG, HH
- [8] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF BPSG FILMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C405 - C405JENKINS, GMBULLERWELL, JM
- [9] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIOX FILMSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C222 - C222ABERNATHEY, JJOHNSON, DNESBIT, LCAMPBELL, DLAM, C
- [10] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP, GAINAS AND GAINASPREVUE TECHNIQUE THOMSON-CSF, 1983, 15 (01): : 59 - 86RAZEGHI, M