DEFECTING TO GALLIUM-ARSENIDE

被引：0
|
作者：
不详
机构：
来源：
SCIENCE NEWS | 1984年 / 125卷 / 20期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：312 / 312
页数：1
相关论文
共 50 条
  • [31] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
    REZNICHENKO, MF
    SALMAN, EG
    VERTOPRAKHOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
  • [32] MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
    ALEXANDER, H
    GOTTSCHALK, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 281 - 292
  • [33] MEV IMPLANTATION OF GALLIUM-ARSENIDE
    KANBER, H
    CHEN, JC
    BARGER, MJ
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 185 - 190
  • [34] GALLIUM-ARSENIDE TECHNOLOGY ON THE MOVE
    BOND, J
    COMPUTER DESIGN, 1985, 24 (01): : 72 - &
  • [35] CHARACTERIZATION OF DEFECTS IN GALLIUM-ARSENIDE
    KUMAR, V
    MOHAPATRA, YN
    BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 83 - 88
  • [36] GALLIUM-ARSENIDE ON SILICON - A REVIEW
    MORKOC, H
    UNLU, H
    ZABEL, H
    OTSUKA, N
    SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76
  • [37] CARBON IMPLANTED INTO GALLIUM-ARSENIDE
    VANBERLO, WH
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2765 - 2769
  • [38] BONDING OF GALLIUM-ARSENIDE CRYSTALS
    CHU, TL
    SMELTZER, RK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 846 - 846
  • [39] NATIVE DEFECTS IN GALLIUM-ARSENIDE
    BOURGOIN, JC
    VONBARDELEBEN, HJ
    STIEVENARD, D
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : R65 - R91
  • [40] MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
    ALEXANDER, H
    GOTTSCHALK, H
    STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 281 - 292
12345