BONDING OF GALLIUM-ARSENIDE CRYSTALS

被引：3

作者：

CHU, TL ^{[1
]}

SMELTZER, RK ^{[1
]}

机构：

[1] SO METHODIST UNIV,ELECT SCI CTR,DALLAS,TX 75222

来源：

关键词：

D O I：

10.1149/1.2403576

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：846 / 846

页数：1

共 50 条

[1] COILED CRYSTALS OF GALLIUM-ARSENIDE
ADDAMIANO, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 351 - +
[2] ANODIC BONDING OF GALLIUM-ARSENIDE TO GLASS
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 267 - 269
[3] ELECTRON MOBILITY IN INHOMOGENEOUS GALLIUM-ARSENIDE CRYSTALS
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[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (11): : 145 - &
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (01): : 42 - +
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[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (09) : 1218 - 1232
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[J]. OCCUPATIONAL MEDICINE-STATE OF THE ART REVIEWS, 1986, 1 (01): : 49 - 58
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[10] POLARIZATION ANISOTROPY OF HOT PHOTOLUMINESCENCE IN GALLIUM-ARSENIDE CRYSTALS
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