SURFACE STATE PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM TEMPERATURE-DEPENDENCE OF SURFACE PHOTOVOLTAGE

被引：8

作者：

KASUPKE, N ^{[1
]}

HENZLER, M ^{[1
]}

机构：

[1] TECH UNIV CLAUSTHAL,PHYS INST,CLAUSTHAL,FED REP GER

来源：

SURFACE SCIENCE | 1976年 / 54卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90092-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：111 / 120

页数：10

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