SURFACE STATE PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM TEMPERATURE-DEPENDENCE OF SURFACE PHOTOVOLTAGE

被引：8
|
作者：
KASUPKE, N [1 ]
HENZLER, M [1 ]
机构：
[1] TECH UNIV CLAUSTHAL,PHYS INST,CLAUSTHAL,FED REP GER
来源：
SURFACE SCIENCE | 1976年 / 54卷 / 01期
关键词：
D O I：
10.1016/0039-6028(76)90092-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：111 / 120
页数：10
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