INTENSITY DEPENDENCE OF DIFFUSION LENGTH IN AMORPHOUS-SILICON BY SURFACE PHOTOVOLTAGE MEASUREMENTS

被引：10

作者：

MOORE, AR

KANE, DE

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

下载

页码：2796 / 2802

页数：7

共 50 条

[1] INTENSITY DEPENDENCE OF DIFFUSION LENGTH IN AMORPHOUS SILICON BY SURFACE PHOTOVOLTAGE MEASUREMENTS.
Moore, A.R.
Kane, D.E.
1600, (56):
[2] LIGHT-INTENSITY DEPENDENCE OF THE AMBIPOLAR DIFFUSION - LENGTH IN HYDROGENATED AMORPHOUS-SILICON
BALBERG, I
DELAHOY, AE
WEAKLIEM, H
CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 352 - 356
[3] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON
MOORE, AR
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 222 - 228
[4] SURFACE PHOTOVOLTAGE IN HYDROGENATED AMORPHOUS-SILICON
KUMAR, S
AGARWAL, SC
APPLIED PHYSICS LETTERS, 1984, 45 (05) : 575 - 577
[5] INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS
HACK, M
SHUR, M
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2967 - 2971
[6] DIFFUSION LENGTH MEASUREMENTS OF THIN AMORPHOUS-SILICON LAYERS
VANDENHEUVEL, JC
VANOORT, RC
GEERTS, MJ
SOLID STATE COMMUNICATIONS, 1989, 69 (08) : 807 - 810
[7] AMBIPOLAR DIFFUSION LENGTH MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON
BALBERG, I
EPSTEIN, KA
RITTER, D
APPLIED PHYSICS LETTERS, 1989, 54 (24) : 2461 - 2463
[8] CONTACT POTENTIAL DIFFERENCE AND SURFACE PHOTOVOLTAGE MEASUREMENTS ON HYDROGENATED AMORPHOUS-SILICON
FOLLER, M
BEYER, W
HERION, J
WAGNER, H
SURFACE SCIENCE, 1986, 178 (1-3) : 47 - 54
[9] IMPROVEMENT IN THE SURFACE PHOTOVOLTAGE METHOD OF DETERMINING DIFFUSION LENGTH IN THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON
MOORE, AR
LIN, HS
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) : 4816 - 4819
[10] SURFACE PHOTOVOLTAGE SPECTROSCOPY IN HYDROGENATED AMORPHOUS-SILICON
UKAH, CI
PERZ, JM
ZUKOTYNSKI, S
JOURNAL OF APPLIED PHYSICS, 1989, 65 (09) : 3617 - 3630

← 1 2 3 4 5 →