INTENSITY DEPENDENCE OF DIFFUSION LENGTH IN AMORPHOUS-SILICON BY SURFACE PHOTOVOLTAGE MEASUREMENTS

被引：10
|
作者：
MOORE, AR
KANE, DE
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
[2] RCA LABS,PRINCETON,NJ 08540
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期
关键词：
D O I：
10.1063/1.333812
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2796 / 2802
页数：7
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