HYDROGEN DIFFUSION AND DENSIFICATION IN AMORPHOUS-SILICON

被引：4
|
作者：
VERGNAT, M
HOUSSAINI, S
MARCHAL, G
MANGIN, P
VETTIER, C
机构：
[1] INST LAUE LANGEVIN,F-38042 GRENOBLE,FRANCE
[2] EUROPEAN SYNCHROTRON RES FACIL,F-38043 GRENOBLE,FRANCE
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.47.7584
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogenated amorphous silicon prepared by evaporation onto low-temperature substrates is characterized by a low-density network and by the presence of (SiH2)n bonds. By monitoring the decay of the small-angle neutron-scattering intensity during annealing of Si/Si:H/Si/Si:M/... (M = H28D72) multilayers, it is possible to follow simultaneously the densification of the silicon network and the diffusion of the hydrogen atoms.
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页码：7584 / 7587
页数：4
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