LOW-TEMPERATURE EPITAXIAL-GROWTH OF (100) SILICON

被引：3
|
作者：
MILOSAVLJEVIC, M [1 ]
JEYENS, C [1 ]
WILSON, IH [1 ]
机构：
[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 17期
关键词：
D O I：
10.1049/el:19830456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：669 / 671
页数：3
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