EPITAXIAL-GROWTH OF HGTE BY LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0

作者：

WANG, CH ^{[1
]}

LU, PY ^{[1
]}

WILLIAMS, LM ^{[1
]}

CHU, SNG ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C176 / C176

页数：1

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