LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：12
|
作者：
MEAKIN, D
STOBBS, M
STOEMENOS, J
ECONOMOU, NA
机构：
[1] UNIV CAMBRIDGE,DEPT MAT SCI & MET,CAMBRIDGE CB2 3Q7,ENGLAND
[2] UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 13期
关键词：
D O I：
10.1063/1.99208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1053 / 1055
页数：3
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