LOW-TEMPERATURE EPITAXIAL-GROWTH OF (100) SILICON

被引：3
|
作者：
MILOSAVLJEVIC, M [1 ]
JEYENS, C [1 ]
WILSON, IH [1 ]
机构：
[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 17期
关键词：
D O I：
10.1049/el:19830456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：669 / 671
页数：3
相关论文
共 50 条
  • [41] EPITAXIAL-GROWTH OF ALPHA-FESI2 ON SI(111) AT LOW-TEMPERATURE
    CHEVRIER, J
    STOCKER, P
    VINH, L
    GAY, JM
    DERRIEN, J
    EUROPHYSICS LETTERS, 1993, 22 (06): : 449 - 454
  • [42] LOW-TEMPERATURE EPITAXIAL GROWTH OF DOPED SILICON FILMS AND JUNCTIONS
    THOMAS, RN
    FRANCOMBE, MH
    SOLID-STATE ELECTRONICS, 1969, 12 (10) : 799 - +
  • [43] IMPORTANCE OF V/III SUPPLY RATIO IN LOW-TEMPERATURE EPITAXIAL-GROWTH OF INAS
    HAMADA, T
    HARIU, T
    ONO, S
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 535 - 540
  • [44] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
    BIEGELSEN, DK
    PONCE, FA
    SMITH, AJ
    TRAMONTANA, JC
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
  • [45] SILICON SELECTIVE EPITAXIAL-GROWTH AT REDUCED PRESSURE AND TEMPERATURE
    REGOLINI, JL
    BENSAHEL, D
    MERCIER, J
    SCHEID, E
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 505 - 512
  • [46] LOW-TEMPERATURE (490 DEGREES-C)GAAS EPITAXIAL-GROWTH ON (100)SI BY MOLECULAR-BEAM EPITAXY
    CHIANG, TY
    YIIN, DH
    LIU, EH
    YEW, TR
    APPLIED PHYSICS LETTERS, 1993, 62 (09) : 985 - 987
  • [47] LOW-TEMPERATURE GAAS EPITAXIAL-GROWTH ON SI(100) BY MOLECULAR-BEAM EPITAXY AND THE POSTGROWTH RAPID THERMAL ANNEALING
    CHIANG, TY
    LIU, EH
    YEW, TR
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (3-4) : 469 - 475
  • [48] OPTIMUM GROWTH-CONDITIONS OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE AT A LOW-TEMPERATURE
    MATSUMURA, N
    MAEMURA, K
    TAKANAKA, N
    ICHIKAWA, S
    SARAIE, J
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 755 - 759
  • [49] AUTODOPING IN LOW-PRESSURE SILICON EPITAXIAL-GROWTH
    KOHNO, Y
    NOMURA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : C456 - C456
  • [50] Low-temperature epitaxial growth of cubic silicon carbide on Si(100) for submicron-pattern fabrication
    An, SJ
    Yi, GC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A): : 1379 - 1383
12345