HEAVILY SI OR BE DOPED MBE GAAS GROWN AT LOW-TEMPERATURES

被引：19
|
作者：
MCQUAID, SA
NEWMAN, RC
MISSOUS, M
OHAGAN, S
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,POB 88,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90673-K
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Infrared absorption due to the localized vibrational modes of Si and Be has been investigated in low temperature molecular beam epitaxial GaAs. A spectrum from Si(Ga)-V(Ga) has been found, but pairing of Be(Ga) was not detected. Anneals of the Si doped layers led to Si-site switching and an apparent loss of silicon from solution. A comparison is made with a previous study of neutron irradiated Si doped GaAs.
引用
收藏
页码：515 / 518
页数：4
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