A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design

被引：1

作者：

Chen Lei ^{[1
]}

Ruan Ying ^{[1
]}

Su Jie ^{[1
]}

Zhang Shulin ^{[1
]}

Shi Chunqi ^{[1
]}

Lai Zongsheng ^{[1
]}

机构：

[1] East China Normal Univ, Inst Microelectron Circuit & Syst, Shanghai 200062, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 05期

关键词：

SiGe; BiCMOS; power amplifier; monolithic; multi-mode;

D O I：

10.1088/1674-4926/32/5/055005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 mu m SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

引用

页数：5

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