A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design

被引：1
|
作者：
Chen Lei [1 ]
Ruan Ying [1 ]
Su Jie [1 ]
Zhang Shulin [1 ]
Shi Chunqi [1 ]
Lai Zongsheng [1 ]
机构：
[1] East China Normal Univ, Inst Microelectron Circuit & Syst, Shanghai 200062, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 05期
关键词：
SiGe; BiCMOS; power amplifier; monolithic; multi-mode;
D O I：
10.1088/1674-4926/32/5/055005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A fully monolithic power amplifier (PA) for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 mu m SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.
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页数：5
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