A Low Power Millimetre-wave VCO in 0.18 μm SiGe BiCMOS Technology

被引:0
|
作者
Zou, Qiong [1 ]
Ma, Kaixue [1 ]
Ye, Wanxin [1 ]
Yeo, Kiat Seng [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 mu m SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip.
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页码:244 / 247
页数:4
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