THE PERFORMANCE AND RELIABILITY OF 800-880 NM INALGAAS ALGAAS AND INGAAS ALGAAS STRAINED LAYER RIDGE WAVE-GUIDE LASERS

被引：4

作者：

MOORE, AH

HOLEHOUSE, N

LEE, SR

MURISON, RF

机构：

[1] Optoelectronics Division EG, G Canada Ltd., Vaudreuil

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90539-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs/AlGaAs lasers have been grown by low pressure MOCVD and fabricated into ridge waveguide lasers. Indium concentrations within the quantum wells are in the range 2-4.5%. The devices have thresholds of 16 mA and differential quantum efficiencies of 68-70%. Lifetesting at a constant CW output power of 10 mW revealed no sudden deaths after 4430 h. The gradual degradation rates were in the range 0.2-1% per 1000 h at 1000 h.

引用

页码：703 / 708

页数：6

共 50 条

[1] INGAAS/ALGAAS RIDGE WAVE-GUIDE LASERS UTILIZING AN INGAP ETCH-STOP LAYER
HOBSON, WS
CHEN, YK
WU, MC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (11) : 1425 - 1427
[2] RIDGE WAVE-GUIDE ALGAAS/GAAS DISTRIBUTED FEEDBACK LASERS
NODA, S
KOJIMA, K
MITSUNAGA, K
KYUMA, K
HAMANAKA, K
NAKAYAMA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (02) : 188 - 193
[3] HIGH-SPEED MODULATION OF STRAINED-LAYER INGAAS-GAAS-ALGAAS RIDGE WAVE-GUIDE MULTIPLE QUANTUM-WELL LASERS
OFFSEY, SD
LESTER, LF
SCHAFF, WJ
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2336 - 2338
[4] PERFORMANCE-CHARACTERISTICS OF STRAINED LAYER INGAAS/GAAS BROAD AREA AND RIDGE WAVE-GUIDE LASERS
SAINTCRICQ, B
BONNEFONT, S
AZOULAY, R
DUGRAND, L
[J]. ELECTRONICS LETTERS, 1991, 27 (10) : 865 - 866
[5] LOW-THRESHOLD STRAINED-LAYER INGAAS RIDGE WAVE-GUIDE LASERS
TAKESHITA, T
OKAYASU, M
KOGURE, O
UEHARA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07): : L1138 - L1140
[6] WAVELENGTH TUNING IN LOW THRESHOLD CURRENT, PARTIALLY PUMPED INGAAS/ALGAAS RIDGE WAVE-GUIDE LASERS
WILLIAMS, RL
MOSS, D
DION, M
BUCHANAN, M
DZURKO, K
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2796 - 2798
[7] Reliability of InGaAs/AlGaAs strained quantum well lasers
Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
[J]. Pan Tao Ti Hsueh Pao, 4 (278-283):
[8] InGaAs/AlGaAs strained layer quantum well lasers
Xu, Zuntu
Xu, Junying
Yang, Guowen
Zhang, Jingming
Chen, Changhua
Chen, Lianghui
Shen, Guangdi
[J]. Zhongguo Jiguang/Chinese Journal of Lasers, 1999, 26 (05): : 390 - 394
[9] INGAAS GAAS ALGAAS STRAINED-LAYER DISTRIBUTED FEEDBACK RIDGE WAVE-GUIDE QUANTUM-WELL HETEROSTRUCTURE LASER ARRAY
MILLER, LM
BEERNINK, KJ
VERDEYEN, JT
COLEMAN, JJ
HUGHES, JS
SMITH, GM
HONIG, J
COCKERILL, TM
[J]. ELECTRONICS LETTERS, 1991, 27 (21) : 1943 - 1945
[10] PHASE-LOCKED RIDGE WAVE-GUIDE INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASER ARRAYS
BEERNINK, KJ
MILLER, LM
COCKERILL, TM
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (25) : 3222 - 3224

← 1 2 3 4 5 →