THE PERFORMANCE AND RELIABILITY OF 800-880 NM INALGAAS ALGAAS AND INGAAS ALGAAS STRAINED LAYER RIDGE WAVE-GUIDE LASERS

被引：4
|
作者：
MOORE, AH
HOLEHOUSE, N
LEE, SR
MURISON, RF
机构：
[1] Optoelectronics Division EG, G Canada Ltd., Vaudreuil
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90539-U
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InGaAs/AlGaAs lasers have been grown by low pressure MOCVD and fabricated into ridge waveguide lasers. Indium concentrations within the quantum wells are in the range 2-4.5%. The devices have thresholds of 16 mA and differential quantum efficiencies of 68-70%. Lifetesting at a constant CW output power of 10 mW revealed no sudden deaths after 4430 h. The gradual degradation rates were in the range 0.2-1% per 1000 h at 1000 h.
引用
收藏
页码：703 / 708
页数：6
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