THE PERFORMANCE AND RELIABILITY OF 800-880 NM INALGAAS ALGAAS AND INGAAS ALGAAS STRAINED LAYER RIDGE WAVE-GUIDE LASERS

InGaAs/AlGaAs lasers have been grown by low pressure MOCVD and fabricated into ridge waveguide lasers. Indium concentrations within the quantum wells are in the range 2-4.5%. The devices have thresholds of 16 mA and differential quantum efficiencies of 68-70%. Lifetesting at a constant CW output power of 10 mW revealed no sudden deaths after 4430 h. The gradual degradation rates were in the range 0.2-1% per 1000 h at 1000 h.