LASER VACUUM EPITAXY OF AIIIBV SEMICONDUCTORS ON SILICON

被引：0
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作者：
BUDYANU, VA
CHECHUY, SN
DAMASKIN, IA
FEDOSEEV, SA
NASAKIN, AA
PYSHKIN, SL
VALKOVSKAYA, MI
ZENCHENKO, VP
机构：
来源：
REVUE ROUMAINE DE PHYSIQUE | 1987年 / 32卷 / 1-2期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：215 / &
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