LASER VACUUM EPITAXY OF AIIIBV SEMICONDUCTORS ON SILICON

被引：0
|
作者：
BUDYANU, VA
CHECHUY, SN
DAMASKIN, IA
FEDOSEEV, SA
NASAKIN, AA
PYSHKIN, SL
VALKOVSKAYA, MI
ZENCHENKO, VP
机构：
来源：
REVUE ROUMAINE DE PHYSIQUE | 1987年 / 32卷 / 1-2期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：215 / &
相关论文
共 50 条
  • [41] Ion-beam-induced surface modification and nanostructuring of AIIIBv semiconductors
    Szymonski, M
    Krok, F
    Struski, P
    Kolodziej, J
    Such, B
    PROGRESS IN SURFACE SCIENCE, 2003, 74 (1-8) : 331 - 341
  • [42] PRODUCTION, PROPERTIES AND USE OF ANODE OXIDE-FILMS ON AIIIBV SEMICONDUCTORS
    SOROKIN, IN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1982, 25 (05): : 588 - 593
  • [43] COMPOUNDS OF ZN OR CD WITH P AND AS AS SOURCES OF ACCEPTOR DIFFUSION INTO AIIIBV SEMICONDUCTORS
    MARENKIN, SF
    PASHKOVA, ON
    RAVICH, VN
    BABIEVSKAYA, IZ
    KAZARINA, NN
    POROIKOV, YA
    INORGANIC MATERIALS, 1990, 26 (09) : 1552 - 1556
  • [44] Excitation spectroscopy of terahertz emitters and detectors made from AIIIBV semiconductors
    Arlauskas, A.
    Adamonis, J.
    Adomavicius, R.
    Krotkus, A.
    2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013,
  • [45] ULTRAHIGH-VACUUM CVD EPITAXY OF SILICON AND GEXSI1-X
    RACANELLI, M
    GREVE, DW
    JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1991, 43 (10): : 32 - 37
  • [46] Monte Carlo simulation of the formation of AIIIBV nanostructures with the use of droplet epitaxy
    Vasilenko M.A.
    Nastovjak A.G.
    Neizvestny I.G.
    Shwartz N.L.
    Optoelectronics, Instrumentation and Data Processing, 2016, 52 (5) : 508 - 517
  • [47] ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION EPITAXY OF SILICON AND GERMANIUM-SILICON HETEROSTRUCTURES
    GREVE, DW
    MISRA, R
    STRONG, R
    SCHLESINGER, TE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 979 - 985
  • [48] Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy
    Ivina, N. L.
    Smyslova, T. N.
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B, 2013, 7 (03) : 244 - 250
  • [49] A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons
    L. K. Orlov
    Yu. N. Drozdov
    M. N. Drozdov
    O. A. Pod’yacheva
    V. I. Vdovin
    Journal of Structural Chemistry, 2010, 51 (Suppl 1) : 145 - 151
  • [50] Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy
    Savkina, NS
    Ratnikov, VV
    Rogachev, AY
    Shuman, VB
    Tregubova, AS
    Volkova, AA
    SEMICONDUCTORS, 2002, 36 (07) : 758 - 762
12345