共 50 条
- [31] PROPERTIES OF LASER-ANNEALED AND THERMALLY-ANNEALED ARSENIC-IMPLANTED SILICON CHINESE PHYSICS, 1981, 1 (03): : 698 - 701
- [34] ELECTRICAL AND BACKSCATTERING STUDIES OF THERMALLY ANNEALED GALLIUM IMPLANTED SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 47 - 54
- [36] Properties of GaAs(001) surfaces thermally annealed in vacuum Journal of Applied Physics, 2009, 105 (04):
- [38] MOSSBAUER-SPECTROSCOPY OF LASER ANNEALED TELLURIUM IMPLANTED SILICON .1. SN-119 AND TE-125 HYPERFINE INTERACTIONS, 1983, 14 (01): : 37 - 51
- [39] ELECTRICAL CHARACTERISTICS OF CD AND TE IMPLANTED GAAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 406 - 406
- [40] RADIATION DEFECTS IN TE-IMPLANTED GERMANIUM - ELECTRON-MICROSCOPY AND COMPUTER-SIMULATION STUDIES PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (03): : 373 - 382