RBS and ellipsometric studies of near surface GaAs ion implanted layers

被引：4
|
作者：
Kulik, M [1 ]
Herec, J [1 ]
Romanek, J [1 ]
机构：
[1] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland
来源：
VACUUM | 2001年 / 63卷 / 04期
关键词：
ion implantation; refraction n and extinction k coefficients; ellipsometry; RBS;
D O I：
10.1016/S0042-207X(01)00271-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaAs samples implanted with Ar+, Al+ and Xe+ ions were studied by using the RBS and ellipsometric methods. The values of thickness of the implanted layers were estimated by both methods and they were in good agreement. These results were also compared with the values of parameters of the depth distribution of implanted ions calculated by SATVAL code. Multilayer models were applied for determination of the optical parameters of investigated samples. The refraction and extinction coefficients of implanted layers increased with the implanted dose. An influence of the type of implanted ion species on the refractive index of oxide layers was observed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：761 / 766
页数：6
相关论文
共 50 条
  • [1] RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers
    Kulik, M.
    Zuk, J.
    Drozdziel, A.
    Pyszniak, K.
    Komarov, F. F.
    Rzodkiewicz, W.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (04): : 340 - 343
  • [2] RBS AND ELLIPSOMETRIC INVESTIGATION OF AMORPHOUS GAAS-LAYERS
    WENDLER, E
    KULIK, M
    WESCH, W
    BACHMANN, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 126 (02): : K105 - K108
  • [3] ELLIPSOMETRIC INVESTIGATION OF ION-IMPLANTED GAAS
    KIM, Q
    PARK, YS
    SURFACE SCIENCE, 1980, 96 (1-3) : 307 - 318
  • [4] RBS and optical studies of ion-implanted amorphous silicon carbide layers
    Romanek, J
    Kobzev, AP
    Kulik, M
    Tsvetkova, T
    Zuk, J
    VACUUM, 2003, 70 (2-3) : 457 - 465
  • [5] THE ROLE OF SURFACE CLEANING IN THE ELLIPSOMETRIC STUDIES OF ION-IMPLANTED SILICON
    LOHNER, T
    VALYI, G
    MEZEY, G
    KOTAI, E
    GYULAI, J
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 54 (3-4): : 251 - 252
  • [6] RBS and channeling studies of GaAs implanted with In+ ions
    Kulik, M
    Komarov, FF
    Maczka, D
    VACUUM, 2001, 63 (04) : 755 - 759
  • [7] Ellipsometric investigation of implanted GaAs
    Kulik, M
    POLARIMETRY AND ELLIPSOMETRY, 1997, 3094 : 308 - 316
  • [8] Effect of N2+ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs
    Kulik, M.
    Surowiec, Z.
    Rzodkiewicz, W.
    Filiks, J.
    Drozdziel, A.
    ACTA PHYSICA POLONICA A, 2015, 128 (05) : 918 - 922
  • [9] ELLIPSOMETRIC AND CHANNELING STUDIES ON ION-IMPLANTED SILICON
    LOHNER, T
    MEZEY, G
    KOTAI, E
    PASZTI, F
    KIRALYHIDI, L
    VALYI, G
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 591 - 594
  • [10] Surface characteristics of nitrogen ion implanted CR-39 polymer: RBS studies
    Chawla, Mahak
    Gupta, Divya
    Shekhawat, Nidhi
    Ojha, Sunil
    Aggarwal, Sanjeev
    VACUUM, 2019, 160 : 89 - 94
12345