RBS and ellipsometric studies of near surface GaAs ion implanted layers

被引：4

作者：

Kulik, M ^{[1
]}

Herec, J ^{[1
]}

Romanek, J ^{[1
]}

机构：

[1] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland

来源：

VACUUM | 2001年 / 63卷 / 04期

关键词：

ion implantation; refraction n and extinction k coefficients; ellipsometry; RBS;

D O I：

10.1016/S0042-207X(01)00271-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs samples implanted with Ar+, Al+ and Xe+ ions were studied by using the RBS and ellipsometric methods. The values of thickness of the implanted layers were estimated by both methods and they were in good agreement. These results were also compared with the values of parameters of the depth distribution of implanted ions calculated by SATVAL code. Multilayer models were applied for determination of the optical parameters of investigated samples. The refraction and extinction coefficients of implanted layers increased with the implanted dose. An influence of the type of implanted ion species on the refractive index of oxide layers was observed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：761 / 766

页数：6

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