Study of optimal ion implanted layers for Si+ implanted Si-GaAs

被引：0
|
作者：
Li, Guohui [1 ]
Han, Dejun [1 ]
Chen, Ruyi [1 ]
Ji, Chengzhou [1 ]
Wang, Cehuan [1 ]
Xia, Deqian [1 ]
Zhu, Hongqing [1 ]
机构：
[1] Beijing Normal Univ, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1994年 / 15卷 / 01期
关键词：
10;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：40 / 47
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