Optical and electrical properties of Si+ ion-implanted GaAs

被引：1
|
作者：
Shima, T
Makita, Y
Iqbal, MZ
Kotani, M
Iida, T
Morton, R
Lau, SS
Koura, N
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Quaid I Azam Univ, Islamabad, Pakistan
[3] Sci Univ Tokyo, Chiba 2780022, Japan
[4] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1998年 / 253卷 / 1-2期
关键词：
ion implantation; dose rate; photoluminescence; silicon; GaAs;
D O I：
10.1016/S0921-5093(98)00741-2
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low temperature photoluminescence (PL) measurements of Si+ ion-implanted GaAs samples were investigated by varying the ion beam current. Electrical measurements proved that higher activation rates can be obtained by using low ion beam currents (3 nA cm(-2)) compared with higher ones (60 nA cm(-2)). In the PL spectra, broad emissions at 840-850 nm can be observed when the dose is higher than 2 x 10(13) cm(-2) and it is more noticeable when using high ion beam current. Since the broad PL emission appears when electrical activation rate decreases, we tentatively attributed this broad emission to a defect-related one. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：306 / 309
页数：4
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