Optical and electrical properties of Si+ ion-implanted GaAs

Low temperature photoluminescence (PL) measurements of Si+ ion-implanted GaAs samples were investigated by varying the ion beam current. Electrical measurements proved that higher activation rates can be obtained by using low ion beam currents (3 nA cm(-2)) compared with higher ones (60 nA cm(-2)). In the PL spectra, broad emissions at 840-850 nm can be observed when the dose is higher than 2 x 10(13) cm(-2) and it is more noticeable when using high ion beam current. Since the broad PL emission appears when electrical activation rate decreases, we tentatively attributed this broad emission to a defect-related one. (C) 1998 Elsevier Science S.A. All rights reserved.