Luminescence of as-grown and thermally annealed GaAsN/GaAs

被引：148

作者：

Francoeur, S ^{[1
]}

Sivaraman, G ^{[1
]}

Qiu, Y ^{[1
]}

Nikishin, S ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the luminescence properties of coherently strained GaAs1-xNx grown on GaAs by metalorganic molecular beam epitaxy. Well-defined photoluminescence was observed in samples with a nitrogen concentration up to 3%. Samples subjected to thermal anneals, investigated by x-ray diffraction and photoluminescence, show increased nitrogen incorporation and significant improvements in the luminescence efficiency. A band-gap reduction of more than 400 meV, compared to GaAs, is observed for a nitrogen concentration of similar to 3%. For the range of nitrogen concentrations investigated here, the band gap follows predictions of the dielectric model of Van Vechten. (C) 1998 American Institute of Physics.

引用

页码：1857 / 1859

页数：3

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