PHOTOLUMINESCENCE INVESTIGATION OF DISTRIBUTION OF DEFECTS IN GALLIUM-ARSENIDE AFTER ION-BOMBARDMENT

被引：0

作者：

GAVRILOV, AA ^{[1
]}

KACHURIN, GA ^{[1
]}

SAFRONOV, LN ^{[1
]}

SMIRNOV, LS ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：847 / 848

页数：2

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