共 50 条
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- [2] THERMAL ANNEALING OF DEFECTS IN GALLIUM-ARSENIDE IRRADIATED WITH SULFUR IONS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 196 - 198ARDYSHEV, VMVERIGIN, AAKRYUCHKOV, YYMAMONTOV, APCHERNOV, IP
- [3] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM-ARSENIDE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 936 - 937VOVNENKO, VIGLINCHUK, KDLUKAT, K
- [4] INTERACTION OF COPPER ATOMS WITH RADIATION DEFECTS IN GALLIUM-ARSENIDE[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : 521 - 525GLINCHUK, KDLUKAT, KVOVNENKO, VI
- [5] INTERACTION OF RADIATION DEFECTS WITH CHROMIUM ATOMS IN GALLIUM-ARSENIDE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 358 - 359GLINCHUK, KDGUROSHEV, VIPROKHOROVICH, AV
- [6] NATIVE DEFECTS IN GALLIUM-ARSENIDE[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : R65 - R91BOURGOIN, JCVONBARDELEBEN, HJSTIEVENARD, D
- [7] CHARACTERIZATION OF DEFECTS IN GALLIUM-ARSENIDE[J]. BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 83 - 88KUMAR, VMOHAPATRA, YN
- [8] SEPARATION OF PRIMARY RADIATION DEFECTS BY AN ELECTRIC-FIELD IN GALLIUM-ARSENIDE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (12): : 1405 - 1406MILEVSKII, LSGARNYK, VS
- [9] INVESTIGATION OF RADIATION DEFECTS IN GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 7 - 9BRUDNYI, VNVILISOV, AADIAMANT, VMKRIVOROTOV, NP
- [10] RADIATION-INDUCED INTERSTITIAL BORON DEFECTS IN GALLIUM-PHOSPHIDE AND GALLIUM-ARSENIDE[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (11): : L345 - L348WOODHEAD, JNEWMAN, RC