共 50 条
- [1] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48
- [2] GALLIUM-ARSENIDE P+-NU DIODES UNDER HYDROSTATIC-PRESSURE [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2810 - 2811
- [3] INFLUENCE OF HYDROSTATIC-PRESSURE ON THE ELECTRICAL-RESISTANCE OF GALLIUM-ARSENIDE WHISKERS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1303 - 1305
- [4] INVESTIGATION OF GALLIUM ANTIMONIDE UNDER HYDROSTATIC-PRESSURE CONDITIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 850 - 851
- [6] DISTRIBUTION OF RADIATION DEFECTS IN GALLIUM-ARSENIDE IRRADIATED WITH DEUTERONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 747 - &
- [7] INFLUENCE OF HYDROSTATIC-PRESSURE ON IONIZATION-ENERGY OF DONOR LEVELS IN N-TYPE GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 294 - 296
- [8] INTERACTION OF RADIATION DEFECTS WITH COPPER ATOMS IN GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 936 - 937
- [9] INTERACTION OF COPPER ATOMS WITH RADIATION DEFECTS IN GALLIUM-ARSENIDE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : 521 - 525
- [10] INTERACTION OF RADIATION DEFECTS WITH CHROMIUM ATOMS IN GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 358 - 359