PHOTOLUMINESCENCE INVESTIGATION OF DISTRIBUTION OF DEFECTS IN GALLIUM-ARSENIDE AFTER ION-BOMBARDMENT

被引：0
|
作者：
GAVRILOV, AA [1 ]
KACHURIN, GA [1 ]
SAFRONOV, LN [1 ]
SMIRNOV, LS [1 ]
机构：
[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 08期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：847 / 848
页数：2
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