DEUTERON BOMBARDMENT OF GALLIUM-ARSENIDE FOR DEVICE ISOLATION

被引：17
|
作者：
STEEPLES, K
SAUNDERS, IJ
SMITH, JG
机构：
来源：
ELECTRON DEVICE LETTERS | 1980年 / 1卷 / 05期
关键词：
D O I：
10.1109/EDL.1980.25235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：72 / 74
页数：3
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