GROWTH OF EPITAXIAL LAYERS OF SILICON BY SUBLIMATION THROUGH THIN ALLOY ZONES

被引：15
|
作者：
FILBY, JD
NIELSEN, S
机构：
来源：
BRITISH JOURNAL OF APPLIED PHYSICS | 1966年 / 17卷 / 01期
关键词：
D O I：
10.1088/0508-3443/17/1/308
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：81 / &
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