共 50 条
- [1] NANOLITHOGRAPHY USING A CHEMICALLY AMPLIFIED NEGATIVE RESIST BY ELECTRON-BEAM EXPOSURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B): : 6993 - 6997
- [2] CHARACTERISTICS OF AN CHEMICALLY AMPLIFIED SILICONE-BASED NEGATIVE RESIST (CSNR) IN ELECTRON-BEAM LITHOGRAPHY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (07): : 2277 - 2281
- [3] NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 37 - 43
- [4] High performance chemically amplified positive electron-beam resist [J]. MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 1332 - 1340
- [6] A chemically amplified fullerene-derivative molecular electron-beam resist [J]. SMALL, 2007, 3 (12) : 2076 - 2080
- [7] Charge-reducing effect of chemically amplified resist in electron-beam lithography [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6756 - 6760
- [8] Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (08): : 4632 - 4635
- [9] Optimization of PHS-based chemically amplified negative resist for 100-kV electron-beam projection lithography (EPL) [J]. EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 344 - 351
- [10] Chemically amplified electron-beam photoresists [J]. CHEMISTRY OF MATERIALS, 1996, 8 (02) : 376 - 381