A STATISTICALLY BASED MODEL OF ELECTRON-BEAM EXPOSED, CHEMICALLY AMPLIFIED NEGATIVE RESIST

被引:7
|
作者
TAM, NN
LIU, HY
SPANOS, C
NEUREUTHER, AR
机构
来源
关键词
D O I
10.1116/1.585342
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A methodology based on statistically designed factorial experiments has been developed to model the dissolution rate of an electron-beam exposed chemically amplified resist, Shipley SAL-601-ER7, for different post-exposure bake (PEB) and developer concentrations. A statistical experiment of dissolution rate measurements were performed in the Perkin-Elmer development rate monitor using a central composite design with PEB temperature, PEB time, and developer concentration as the factors. These measurements were combined with Monte Carlo simulation of electron energy deposition to generate dissolution rate data as a function of absorbed energy. These data were then fitted to a semiempirical rate equation using nonlinear regression. Statistical analysis of the effects of the three processing factors on the parameters of the rate functions yielded empirical models relating the parameters to the factors. As a result, a rate equation can be determined for any processing conditions, and thus a complete model is obtained for the simulation and optimization of the resist.
引用
收藏
页码:3362 / 3369
页数:8
相关论文
共 50 条
  • [41] PROXIMITY EFFECT CORRECTION FOR NEGATIVE RESIST IN ELECTRON-BEAM LITHOGRAPHY
    NAKAYAMA, N
    MACHIDA, Y
    FURUYA, S
    YAMAMOTO, S
    HISATSUGU, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C112 - C112
  • [42] Stochastic simulation of pattern formation for chemically amplified resist in electron beam lithography
    Koyama, Masanori
    Shirai, Masamitsu
    Kawata, Hiroaki
    Hirai, Yoshihiko
    Yasuda, Masaaki
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SD)
  • [43] Development of the chemically amplified three-component positive electron beam resist
    Horibe, H
    Kumada, T
    Fujino, T
    Kimura, Y
    Kubota, S
    [J]. KOBUNSHI RONBUNSHU, 1998, 55 (05) : 231 - 242
  • [44] Basic aspects of acid generation processes in chemically amplified electron beam resist
    Kozawa, T
    Tagawa, S
    [J]. JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (04) : 471 - 474
  • [45] Electron beam lithography of isolated trenches with chemically amplified positive resist.
    Eckert, A
    Bojko, R
    Gentile, H
    Harris, R
    Jayashankar, J
    Johns, E
    Minor, K
    Mountfield, K
    Seiler, C
    Yang, XM
    [J]. EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 : 878 - 887
  • [46] AN AQUEOUS DEVELOPABLE DEEP UV ELECTRON-BEAM NEGATIVE RESIST
    TOUKHY, MA
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 539 : 131 - 137
  • [47] Chemically amplified resists for electron-beam projection lithography mask fabrication
    Magg, C
    Lercel, M
    [J]. EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 276 - 283
  • [48] Chemically amplified electron beam positive resist with acetal protecting group - Effect of the additives on resist properties
    Saito, S
    Kihara, N
    Ushirogouchi, T
    [J]. MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 290 - 291
  • [49] POLYSILOXANE RESIST AS A PROBE FOR ENERGY DEPOSITED IN ELECTRON-BEAM EXPOSED RESISTS
    PARASZCZAK, J
    KERN, D
    HATZAKIS, M
    BUCCHIGNANO, J
    ARTHUR, E
    ROSENFIELD, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1372 - 1377
  • [50] A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON-BEAM RESIST
    YAMADA, M
    HATTORI, S
    MORITA, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2598 - 2602