A STATISTICALLY BASED MODEL OF ELECTRON-BEAM EXPOSED, CHEMICALLY AMPLIFIED NEGATIVE RESIST

被引:7
|
作者
TAM, NN
LIU, HY
SPANOS, C
NEUREUTHER, AR
机构
来源
关键词
D O I
10.1116/1.585342
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A methodology based on statistically designed factorial experiments has been developed to model the dissolution rate of an electron-beam exposed chemically amplified resist, Shipley SAL-601-ER7, for different post-exposure bake (PEB) and developer concentrations. A statistical experiment of dissolution rate measurements were performed in the Perkin-Elmer development rate monitor using a central composite design with PEB temperature, PEB time, and developer concentration as the factors. These measurements were combined with Monte Carlo simulation of electron energy deposition to generate dissolution rate data as a function of absorbed energy. These data were then fitted to a semiempirical rate equation using nonlinear regression. Statistical analysis of the effects of the three processing factors on the parameters of the rate functions yielded empirical models relating the parameters to the factors. As a result, a rate equation can be determined for any processing conditions, and thus a complete model is obtained for the simulation and optimization of the resist.
引用
收藏
页码:3362 / 3369
页数:8
相关论文
共 50 条
  • [21] NOVEL, NEGATIVE WORKING ELECTRON-BEAM RESIST
    TAN, ZCH
    DALY, RC
    GEORGIA, SS
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 469 : 135 - 142
  • [22] Chemically amplified silicon containing resist for electron beam lithography
    Park, SJ
    Kim, KC
    Kim, ER
    Lee, H
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S725 - S728
  • [23] Study of chemically amplified resist using an electron beam recorder
    Kasono, O
    Sugimoto, T
    Katsumura, M
    Higuchi, T
    Kojima, Y
    Iida, T
    [J]. ISOM/ODS 2002: INTERNATIONAL SYMPOSIUM ON OPTICAL MEMORY AND OPTICAL DATA STORAGE TOPICAL MEETING, TECHNICAL DIGEST, 2002, : 21 - 23
  • [24] Study of chemically amplified resist using an electron beam recorder
    Kasono, O
    Sugimoto, T
    Katsumura, M
    Higuchi, T
    Kojima, Y
    Iida, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2B): : 764 - 768
  • [25] Study of chemically amplified resist using an electron beam recorder
    Kasono, Osamu
    Sugimoto, Tatsuya
    Katsumura, Masahiro
    Higuchi, Takanobu
    Kojima, Yoshiaki
    Iida, Tetsuya
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (2 B): : 764 - 768
  • [26] Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications
    Ainley, E
    Nordquist, K
    Resnick, DJ
    Carr, DW
    Tiberio, RC
    [J]. MICROELECTRONIC ENGINEERING, 1999, 46 (1-4) : 375 - 378
  • [27] COMPARISON OF EXPOSURE, BAKE, AND DISSOLUTION CHARACTERISTICS OF ELECTRON-BEAM AND OPTICALLY EXPOSED CHEMICALLY AMPLIFIED RESISTS
    TAM, NN
    FERGUSON, RA
    TITUS, A
    HUTCHINSON, JM
    SPENCE, CA
    NEUREUTHER, AR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1470 - 1475
  • [28] NOVEL, NEGATIVE-WORKING ELECTRON-BEAM RESIST
    GEORGIA, SS
    TAN, ZCH
    DALY, RC
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1984, 188 (AUG): : 12 - ACSC
  • [29] Dependence of acid yield on chemically amplified electron beam resist thickness
    Shigaki, Takumi
    Okamoto, Kazumasa
    Kozawa, Takahiro
    Yamamoto, Hiroki
    Tagawa, Seiichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6B): : 5445 - 5449
  • [30] Analysis of acid yield generated in chemically amplified electron beam resist
    Kozawa, Takahiro
    Shigaki, Takumi
    Okamoto, Kazumasa
    Saeki, Akinori
    Tagawa, Seiichi
    Kai, Toshiyuki
    Shimokawa, Tsutomu
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3055 - 3060