Chemically amplified electron-beam photoresists

被引：17

作者：

Crivello, JV

Shim, SY

机构：

[1] Department of Chemistry, Rensselaer Polytechnic Institute, Troy

来源：

CHEMISTRY OF MATERIALS | 1996年 / 8卷 / 02期

关键词：

D O I：

10.1021/cm950199s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two novel series of electron-beam photoresists possessing high sensitivity and contrast have been developed based an chemical amplification chemistry. The amplification process relies on the electron-beam-induced generation of acids derived from the decomposition of onium salts to catalytically deblock pendant tert-butyl ester groups along the backbone of a photoresist polymer or alternatively similar groups present in dissolution inhibitors.

引用

页码：376 / 381

页数：6

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