A RAPID ISOTHERMAL ANNEALING FOR A VLSI INTERCONNECTION TECHNOLOGY

被引：0

作者：

NISHIMURA, H ^{[1
]}

SUIZU, Y ^{[1
]}

TSUJIMARU, T ^{[1
]}

机构：

[1] TOSHIBA CORP,VLSI RES CTR,DIV INTEGRATED CIRCUIT,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C320 / C320

页数：1

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